Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL

Abstract

In this work, we study the characteristic temperature of a quantum dot laser (QDL) in
presence of internal optical loss and quantum efficiency. The control parameters (the constant
component of internal loss coefficient, effective cross section, carrier excitation energies from
a QD to the optical confinement layer (OCL), and the root mean square (RMS) of relative
QD-size fluctuations) are used for achieving free carrier density in the OCL and threshold
current density and its component.